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8 March 1989 Dynamic Band Filling In GaAs/AlAs Multiple Quantum Wells For Efficient Reflection Modulation
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Proceedings Volume 1017, Nonlinear Optical Materials; (1989)
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
We demonstrate all-optical intensity modulation in GaAs/AlAs multiple quantum well (MQW) devices with integrated dielectric reflector grown by molecular beam epitaxy. A 4 mW control beam at λc = 790 nm wavelength produces a reflection change of 1:3 by dynamic band filling in a twenty-period GaAs MQW structure of well width dOW = 20 nm for a test beam at λt = 866 nm which is close to the lowest energy transition ifl the quantum wells ( λ= 868 nm). The integration of a multilayered dielectric reflector of 92% reflectivity consisting of 20 pairs of A10.08Ga0.92 As/AlAs quarterwave layers allows for operation in reflection and thus removal of tWe opaque GaAs substrate is not required. Dynamics are shown to be limited by excess carrier lifetimes of τ = 4 ns corresponding to a 3 dB frequency of 70 MHz. Surface recombination in microresonator structures may be used to improve the dynamics. For a theoretical analysis the carrier-induced absorption change by dynamic band filling of the quantized energy states in the conduction and valence bands of the quantum wells is considered.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wolfgang Kowalsky, Thomas Hackbarth, and Karl J. Ebeling "Dynamic Band Filling In GaAs/AlAs Multiple Quantum Wells For Efficient Reflection Modulation", Proc. SPIE 1017, Nonlinear Optical Materials, (8 March 1989);

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