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8 March 1989 Photo-Electronic Optical Nonlinearities In Three- And Quasi Two-Dimensional Semiconductors
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Proceedings Volume 1017, Nonlinear Optical Materials; (1989) https://doi.org/10.1117/12.949952
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
We report here on photo-electronic nonlinearities in direct gap seminconductors, especially those connected with the transition from a low-density gas of excitons to an electron-hole plasma. We consider both three-dimensional and quasi two-dimensional semiconductors and compare both systms. Finally we show that these photo-electronic optical non-linearities can be used to obtain various types of optical bistability.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Klingshirn, Ch. Weber, H.E. Swoboda, R. Renner, F. A. Majumder, M. Kunz, M. Rinker, H. Schwab, M. Wegener, and D. S. Chemla "Photo-Electronic Optical Nonlinearities In Three- And Quasi Two-Dimensional Semiconductors", Proc. SPIE 1017, Nonlinear Optical Materials, (8 March 1989); https://doi.org/10.1117/12.949952
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