A fully differential OTA with dynamic offset cancellation in 28nm FD-SOI process

Zbigniew Jaworski

doi:10.1117/12.2261891

Translator Disclaimer

22 December 2016 A fully differential OTA with dynamic offset cancellation in 28nm FD-SOI process

Zbigniew Jaworski

Author Affiliations +

Proceedings Volume 10175, Electron Technology Conference 2016; 1017509 (2016) https://doi.org/10.1117/12.2261891
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland

Abstract

This papers presents a classic fully differential operational transconductance amplifier (FDOTA) implemented in industrial 28 nm FD-SOI (Fully-Depleted SOI) technology. A novel approach to minimized the FDOTA offset voltage is proposed. The solution employs the unique feature of FD-SOI technology - back-gate biasing - combined with modern compensation methodology. The proposed method results in considerable design overhead. However, this offset cancellation approach is very effective and allows to improve FDOTA performance when classic techniques reach their limits.

Citation Download Citation

Zbigniew Jaworski "A fully differential OTA with dynamic offset cancellation in 28nm FD-SOI process", Proc. SPIE 10175, Electron Technology Conference 2016, 1017509 (22 December 2016); https://doi.org/10.1117/12.2261891

ACCESS THE FULL ARTICLE