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9 May 2017 Recent advances in InAs/InAs1-xSbx/AlAs1-xSbx gap-engineered type-II superlattice-based photodetectors
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InAs/InAs1-xSbx/AlAs1-xSbx type-II superlattices (T2SLs) is a system of multi-interacting quantum wells. Since its introduction, this material system has drawn a lot of attention especially for infrared detection. In recent years, InAs/InAs1- xSbx/AlAs1-xSbx T2SL material system has experienced incredible improvements in material quality, device structure designs and device fabrication process which elevated the performances of T2SL-based photodetectors to a comparable level to the state-of-the-art material systems for infrared detection such as Mercury Cadmium Telluride (MCT). In this paper, we will present the current status of InAs/InAs1-xSbx/AlAs1-xSbx T2SL-based photodetectors for detection in different infrared regions, from short-wavelength (SWIR) to long-wavelength (LWIR) infrared, and the future outlook of this material system.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manijeh Razeghi, Abbas Haddadi, Arash Dehzangi, Romain Chevallier, and Thomas Yang "Recent advances in InAs/InAs1-xSbx/AlAs1-xSbx gap-engineered type-II superlattice-based photodetectors", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 1017705 (9 May 2017);

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