Al/Sb free InGaAs unipolar barrier infrared detectors

Fatih Uzgur; Utku Karaca; Ekin Kizilkan; Serdar Kocaman

doi:10.1117/12.2262519

Translator Disclaimer

3 May 2017 Al/Sb free InGaAs unipolar barrier infrared detectors

Fatih Uzgur, Utku Karaca, Ekin Kizilkan, Serdar Kocaman

Author Affiliations +

Proceedings Volume 10177, Infrared Technology and Applications XLIII; 1017706 (2017) https://doi.org/10.1117/12.2262519
Event: SPIE Defense + Security, 2017, Anaheim, California, United States

Abstract

It is numerically shown that Al/Sb free InGaAs unipolar barrier detectors with superior performance compared to the conventional heterojunction detectors can be constructed. Compositionally graded layers provide the transition between the high bandgap InGaAs barrier and the lattice matched InGaAs absorber layers. In addition, the delta doped layers remove the valence band offset in order to block only majority carriers and allow unimpeded flow of minority carriers. More than one order of magnitude reduction in the dark current is observed while photocurrent remains nearly unchanged. Proposed barrier structure utilized in this study is not limited to short wave infrared (SWIR) and can be applied to a variety of materials operating in various infrared regions.

Conference Presentation

Citation Download Citation

Fatih Uzgur, Utku Karaca, Ekin Kizilkan, and Serdar Kocaman "Al/Sb free InGaAs unipolar barrier infrared detectors", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 1017706 (3 May 2017); https://doi.org/10.1117/12.2262519

ACCESS THE FULL ARTICLE