Advances in III-V bulk and superlattice-based high operating temperature MWIR detector technology

H. Sharifi; M. Roebuck; S. Terterian; J. Jenkins; B. Tu; W. Strong; T. J. De Lyon; R. D. Rajavel; J. Caulfield; Brett Z. Nosho; J. P. Curzan

doi:10.1117/12.2266281

Translator Disclaimer

16 May 2017 Advances in III-V bulk and superlattice-based high operating temperature MWIR detector technology

H. Sharifi, M. Roebuck, S. Terterian, J. Jenkins, B. Tu, W. Strong, T. J. De Lyon, R. D. Rajavel, J. Caulfield, Brett Z. Nosho, J. P. Curzan

Author Affiliations +

Proceedings Volume 10177, Infrared Technology and Applications XLIII; 101770U (2017) https://doi.org/10.1117/12.2266281
Event: SPIE Defense + Security, 2017, Anaheim, California, United States

Abstract

Barrier detectors based on III-V materials have recently been developed to realize substantial improvements in the performance of mid-wave infrared (MWIR) detectors, enabling FPA performance at high operating temperatures. The relative ease of processing the III-V materials into large-format, small-pitch FPAs offers a cost-effective solution for tactical imaging applications in the MWIR band as an attractive alternative to HgCdTe detectors. In addition, small pixel (5-10μm pitch) detector technology enables a reduction in size of the system components, from the detector and ROIC chips to the focal length of the optics and lens size, resulting in an overall compactness of the sensor package, cooling and associated electronics. To exploit the substantial cost advantages, scalability to larger format (2kx2k/10μm) and superior wafer quality of large-area GaAs substrates, we have fabricated antimony based III-V bulk detectors that were metamorphically grown by MBE on GaAs substrates. The electro-optical characterization of fabricated 2kx2k/10μm FPAs shows low median dark current (3 x 10^-5 A/cm² with λ_co = 5.11μm or 2.2 x 10^-6 A/cm² with λ_co = 4.6μm) at 150K, high NEdT operability (3x median value) >99.8% and >60% quantum efficiency (non-ARC). In addition, we report our initial result in developing small pixel (5μm pitch), high definition (HD) MWIR detector technology based on superlattice III-V absorbing layers grown by MBE on GaSb substrates. The FPA radiometric result is showing low median dark current (6.3 x 10^-6 A/cm² at 150K with λ_co = 5.0μm) with ~50% quantum efficiency (non-ARC), and low NEdT of 20mK (with averaging) at 150K. The detector and FPA test results that validate the viability of Sb-based bulk and superlattice high operating temperature MWIR FPA technology will be discussed during the presentation.

Conference Presentation

Citation Download Citation

H. Sharifi, M. Roebuck, S. Terterian, J. Jenkins, B. Tu, W. Strong, T. J. De Lyon, R. D. Rajavel, J. Caulfield, Brett Z. Nosho, and J. P. Curzan "Advances in III-V bulk and superlattice-based high operating temperature MWIR detector technology", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101770U (16 May 2017); https://doi.org/10.1117/12.2266281

ACCESS THE FULL ARTICLE