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16 May 2017 High quantum efficiency mid-wavelength infrared superlattice photodetector
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We report high quantum efficiency (QE) MWIR barrier photodetectors based on the InAs/GaSb/AlSb type II superlattice (T2SL) material system. The nBp design consists of a single unipolar barrier (InAs/AlSb SL) placed between a 4 μm thick p-doped absorber (InAs/GaSb SL) and an n-type contact layer (InAs/GaSb SL). At 80K, the device exhibited a 50% cut-off wavelength of 5 μm, was fully turned-ON at zero bias and the measured QE was 62% (front side illumination with no AR coating) at 4.5 μm with a dark current density of 8.5×10-9 A/cm2 . At 150 K and Vb=50 mV, the 50% cut-off wavelength increased to 5.3 μm and the quantum efficiency (QE) was measured to be 64% at 4.5 μm with a dark current of 1.07×10-4 A/cm2 . The measurements were verified at multiple AFRL laboratories. The results from this device along with the analysis will be presented in this paper.
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Alireza Kazemi, Stephen Myers, Zahra Taghipour, Sen Mathews, Ted Schuler-Sandy, Seung Hyun Lee, Vincent M. Cowan, Eli Garduno, Elizabeth Steenbergen, Christian Morath, Gamini Ariyawansa, John Scheihing, and Sanjay Krishna "High quantum efficiency mid-wavelength infrared superlattice photodetector", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101771M (16 May 2017);

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