Short wavelength infrared photodetector and light emitting diode based on InGaAsSb

Jun Oh Kim; Tien Dai Nguyen; Zahyun Ku; Augustine Urbas; Sang-Woo Kang; Sang Jun Lee

doi:10.1117/12.2264969

16 May 2017 Short wavelength infrared photodetector and light emitting diode based on InGaAsSb

Jun Oh Kim, Tien Dai Nguyen, Zahyun Ku, Augustine Urbas, Sang-Woo Kang, Sang Jun Lee

Proceedings Volume 10177, Infrared Technology and Applications XLIII; 101772M (2017) https://doi.org/10.1117/12.2264969
Event: SPIE Defense + Security, 2017, Anaheim, CA, United States

Abstract

We report on InGaAsSb infrared photodetector and light emitting diode for short wavelength infrared detection and emission. The InGaAsSb samples were grown by molecular beam epitaxy (MBE) system on a GaSb substrate. In order to investigate the structural properties of InGaAsSb layer, we took a high resolution XRD and low voltage SEM. The InGaAsSb devices were processed in 400×400 μm2 using inductively coupled plasma etching. We have measured the spectral response of InGaAsSb based photodetector using various temperature and bias. The cut-off wavelength of photodetector was 3.0 μm at room temperature. We also report an electroluminescence of InGaAsSb LED. Keywords: Short wavelength infrared, photodetector, light emitting diode, InGaAsSb, GaSb.

Citation Download Citation

Jun Oh Kim, Tien Dai Nguyen, Zahyun Ku, Augustine Urbas, Sang-Woo Kang, and Sang Jun Lee "Short wavelength infrared photodetector and light emitting diode based on InGaAsSb", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101772M (16 May 2017); https://doi.org/10.1117/12.2264969

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KEYWORDS

Indium gallium arsenide antimonide

Light emitting diodes

Photodetectors

Gallium antimonide

Infrared radiation

Infrared photography

Antimony

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