Black phosphorous optoelectronic devices

Xiaolong Chen; Fengnian Xia

doi:10.1117/12.2263244

18 May 2017 Black phosphorous optoelectronic devices

Xiaolong Chen, Fengnian Xia

Proceedings Volume 10194, Micro- and Nanotechnology Sensors, Systems, and Applications IX; 101940E (2017) https://doi.org/10.1117/12.2263244
Event: SPIE Defense + Security, 2017, Anaheim, CA, United States

Abstract

Black phosphorus recently emerged as a promising two-dimensional material due to its widely tunable and direct bandgap, high carrier mobility and remarkable in-plane anisotropic electrical, optical and phonon properties. It serendipitously bridges the zero-gap graphene and the relatively large-bandgap transition metal dichalcogenides such as molybdenum disulfide (MoS₂). In this brief review manuscript, we will first cover the basic properties of few-layer and thin-film black phosphorus. Then we will present a few potential applications of black phosphorus such as radiofrequency transistors and wideband photodetectors. Finally we will discuss the recent observation of efficient bandgap tuning in black phosphorus thin films in a dual-gate transistor, and conclude with the discussion of synthesis of large area and high quality black phosphorus thin films.

Conference Presentation

Citation Download Citation

Xiaolong Chen and Fengnian Xia "Black phosphorous optoelectronic devices", Proc. SPIE 10194, Micro- and Nanotechnology Sensors, Systems, and Applications IX, 101940E (18 May 2017); https://doi.org/10.1117/12.2263244

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