Layout-aware simulation of soft errors in sub-100 nm integrated circuits

A. Balbekov; M. Gorbunov; S. Bobkov

doi:10.1117/12.2266880

30 December 2016 Layout-aware simulation of soft errors in sub-100 nm integrated circuits

A. Balbekov, M. Gorbunov, S. Bobkov

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022418 (2016) https://doi.org/10.1117/12.2266880
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

Single Event Transient (SET) caused by charged particle traveling through the sensitive volume of integral circuit (IC) may lead to different errors in digital circuits in some cases. In technologies below 180 nm, a single particle can affect multiple devices causing multiple SET. This fact adds the complexity to fault tolerant devices design, because the schematic design techniques become useless without their layout consideration. The most common layout mitigation technique is a spatial separation of sensitive nodes of hardened circuits. Spatial separation decreases the circuit performance and increases power consumption. Spacing should thus be reasonable and its scaling follows the device dimensions’ scaling trend. This paper presents the development of the SET simulation approach comprised of SPICE simulation with “double exponent” current source as SET model. The technique uses layout in GDSII format to locate nearby devices that can be affected by a single particle and that can share the generated charge. The developed software tool automatizes multiple simulations and gathers the produced data to present it as the sensitivity map. The examples of conducted simulations of fault tolerant cells and their sensitivity maps are presented in this paper.

Citation Download Citation

A. Balbekov, M. Gorbunov, and S. Bobkov "Layout-aware simulation of soft errors in sub-100 nm integrated circuits", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022418 (30 December 2016); https://doi.org/10.1117/12.2266880

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