Comparative study of CF4- and CHF3-based plasmas for dry etching applications

A. Efremov; K.-H. Kwon; A. Morgunov; D. Shabadarova

doi:10.1117/12.2266715

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30 December 2016 Comparative study of CF₄- and CHF₃-based plasmas for dry etching applications

A. Efremov, K.-H. Kwon, A. Morgunov, D. Shabadarova

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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102241W (2016) https://doi.org/10.1117/12.2266715
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

The influence of O₂/Ar mixing ratio on plasma characteristics, densities and fluxes of active species determining the dry etching kinetics in both CF₄/O₂/Ar and CHF3/O2/Ar plasmas was studied. The investigation combined plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling. It was found that the substitution of O₂ for Ar at constant fraction of CF₄ or CHF₃ in a feed gas noticeably changes electron temperature and electron density, but does not result in the non-monotonic behavior of F atom density. The differences between two gas systems were discussed in details from the point of view of plasma chemistry.

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A. Efremov, K.-H. Kwon, A. Morgunov, and D. Shabadarova "Comparative study of CF₄- and CHF₃-based plasmas for dry etching applications", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241W (30 December 2016); https://doi.org/10.1117/12.2266715

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