Paper
26 April 1989 Laser Plasmas As X-Ray Sources For Lithographic Imaging Of Submicron Structures
F. Bijkerk, G. E. van Dorssen, M. J. van der Wiel
Author Affiliations +
Proceedings Volume 1023, Excimer Lasers and Applications; (1989) https://doi.org/10.1117/12.950153
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
Laser radiation can be used efficiently to generate X rays for lithographic imaging of submicron patterns, e.g. for VLSI device fabrication. Due to their short wavelength and high average power, excimer lasers show much potential for this application. Results are presented of scaling studies for high repetition rate excimer laser application, using the frequency doubled output of a low repetition rate Nd:YAG/Glass laser. Spectral and spatial characteristics of X-ray emission of the laser plasma are shown. The power density in the laser focus was 3x1012 W/cm2. With this source Si X-ray masks with submicron Au absorber profiles are imaged into high sensitivity X-ray photoresist. For the exposures 80 lasershots sufficed to yield high quality submicron structures. Extrapolation of the results to a high power excimer laser reduces the exposure time of the photoresists to several seconds, enabling a wafer throughput at an industrial level.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Bijkerk, G. E. van Dorssen, and M. J. van der Wiel "Laser Plasmas As X-Ray Sources For Lithographic Imaging Of Submicron Structures", Proc. SPIE 1023, Excimer Lasers and Applications, (26 April 1989); https://doi.org/10.1117/12.950153
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KEYWORDS
Plasmas

Photomasks

Excimer lasers

X-rays

Semiconducting wafers

Lithography

Silicon

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