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Ion implantation into silicon causes radiation damage. If a sufficient dose is implanted, complete
amorphisation can result in any implanted part of an optical device. Amorphous silicon has a refractive index
that is significantly different higher than that of crystalline silicon (~10-1), and can therefore form the basis of
a refractive index change in optical devices. This refractive index change can be partially or completely
removed by annealing. In recent years we have presented results on the development of erasable gratings in
silicon to facilitate wafer scale testing of silicon photonics circuits. These gratings are formed by amorphising
selected areas of silicon by utilising ion implantation of Germanium. However, we have now used similar
technology for trimming of integrated photonic components. In this paper we discuss design, modelling and
fabrication of ring resonators and their subsequent trimming using ion implantation of Germanium into silicon
followed by annealing.
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Graham T. Reed, Milan M. Milosevic, Xia Chen, David J. Thomson, "Trimming of ring resonators via ion implantation in silicon," Proc. SPIE 10242, Integrated Optics: Physics and Simulations III, 102420Q (17 May 2017); https://doi.org/10.1117/12.2271673