Experimental analysis of silicon oxycarbide thin films and waveguides

Faisal Ahmed Memon; Francesco Morichetti; Claudio Somaschini; Giosue Iseni; Andrea Melloni

doi:10.1117/12.2265309

17 May 2017 Experimental analysis of silicon oxycarbide thin films and waveguides

Faisal Ahmed Memon, Francesco Morichetti, Claudio Somaschini, Giosue Iseni, Andrea Melloni

Proceedings Volume 10242, Integrated Optics: Physics and Simulations III; 1024212 (2017) https://doi.org/10.1117/12.2265309
Event: SPIE Optics + Optoelectronics, 2017, Prague, Czech Republic

Abstract

Silicon oxycarbide (SiOC) thin films are produced with reactive rf magnetron sputtering of a silicon carbide (SiC) target on Si (100) and SiO₂/Si substrates under varying deposition conditions. The optical properties of the deposited SiOC thin films are characterized with spectroscopic ellispometry at multiple angles of incidence over a wavelength range 300- 1600 nm. The derived optical constants of the SiOC films are modeled with Tauc-Lorentz model. The refractive index n of the SiOC films range from 1.45 to 1.85 @ 1550 nm and the extinction coefficient k is estimated to be less than 10^-4 in the near-infrared region above 1000 nm. The topography of SiOC films is studied with SEM and AFM giving rms roughness of 0.9 nm. Channel waveguides with a SiOC core with a refractive index of 1.7 have been fabricated to demonstrate the potential of sputtered SiOC for integrated photonics applications. Propagation loss as low as 0.39 ± 0.05 dB/mm for TE and 0.41 ± 0.05 dB/mm for TM polarizations at telecommunication wavelength 1550 nm is demonstrated.

Citation Download Citation

Faisal Ahmed Memon, Francesco Morichetti, Claudio Somaschini, Giosue Iseni, and Andrea Melloni "Experimental analysis of silicon oxycarbide thin films and waveguides", Proc. SPIE 10242, Integrated Optics: Physics and Simulations III, 1024212 (17 May 2017); https://doi.org/10.1117/12.2265309

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