Experimental Comparison Of Planar Buried-Ridge-Structure (PBRS) Laser Diodes With Bridge-Contacted PBRS Laser Diodes

Wolfgang Thulke; Anton Zach

doi:10.1117/12.950197

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5 April 1989 Experimental Comparison Of Planar Buried-Ridge-Structure (PBRS) Laser Diodes With Bridge-Contacted PBRS Laser Diodes

Wolfgang Thulke, Anton Zach

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Proceedings Volume 1025, Semiconductor Lasers; (1989) https://doi.org/10.1117/12.950197
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

The influence of the large-area forward-biased p-n homojunctions at both sides of the active stripe on the performance of PBRS laser diodes has been investigated. For that purpose, the Bridge-Contacted (BC) PBRS has been created, within which the area of these junctions is significantly reduced without changing the fundamental features of the fabrication process and the structure geometry. The comparison of both structures originating from the same wafer on an n-type substrate shows that the forward-biased junctions do not severely affect the PBRS laser performance. On p-type substrates, however, bridge-contacting is expected to improve considerably the current confinement.

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Wolfgang Thulke and Anton Zach "Experimental Comparison Of Planar Buried-Ridge-Structure (PBRS) Laser Diodes With Bridge-Contacted PBRS Laser Diodes", Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); https://doi.org/10.1117/12.950197

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