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5 April 1989 Experimental Comparison Of Planar Buried-Ridge-Structure (PBRS) Laser Diodes With Bridge-Contacted PBRS Laser Diodes
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Proceedings Volume 1025, Semiconductor Lasers; (1989) https://doi.org/10.1117/12.950197
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
The influence of the large-area forward-biased p-n homojunctions at both sides of the active stripe on the performance of PBRS laser diodes has been investigated. For that purpose, the Bridge-Contacted (BC) PBRS has been created, within which the area of these junctions is significantly reduced without changing the fundamental features of the fabrication process and the structure geometry. The comparison of both structures originating from the same wafer on an n-type substrate shows that the forward-biased junctions do not severely affect the PBRS laser performance. On p-type substrates, however, bridge-contacting is expected to improve considerably the current confinement.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wolfgang Thulke and Anton Zach "Experimental Comparison Of Planar Buried-Ridge-Structure (PBRS) Laser Diodes With Bridge-Contacted PBRS Laser Diodes", Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); https://doi.org/10.1117/12.950197
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