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5 April 1989 Ridge Waveguidc DFB Laser Operating At = 1.5 µm Fabricated In A Single Step Epitaxial Growth
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Proceedings Volume 1025, Semiconductor Lasers; (1989)
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Ridge Waveguide MB lasers were fabricated by I.PF over-growth of a first order grating in the InP substrate with a sequence of planar layers consisting of a λ = 1.3 μm InGaAsP guiding layer, a A = 1.5 pm InGaAsP active layer, a λ = 1.3 μm InGaAsP guiding layer, an InP layer and an InGaAsP contact layer. Excellent control of layer thickness was obtained using a special LPE boat allowing the overgrowth of several wafers from the same set of mothermelts. The lasers obtained after etching of a 3.5 μm wide ridge, deposition of SiO2 isolation, metallization and mounting, show threshold currents of 35 mΛ and efficiencies of 18% at 20 C. Selected devices showed single longitudinal mode operation with a sideband suppression better then 30 dB for powers up to 10 mW. Spectra recorded near threshold show a clear stopband which compares very well in width to devices with the grating located above the active layer. The Ridge Waveguide DFB laser fabricated in a single epitaxial step is a very promising structure for making opto-electronic integrated devices in a relatively simple way.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luuk F. Tiemeyer, Hans J. Binsma, Harry A. van Zantvoort, Ingrid A. Baele, Teus van Dongen, and Geert L. van der Hofstad "Ridge Waveguidc DFB Laser Operating At = 1.5 µm Fabricated In A Single Step Epitaxial Growth", Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989);


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