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5 April 1989 Structural And Compositional Characterization Of Semiconductor Multilayers By Modulation Spectroscopies.
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Proceedings Volume 1025, Semiconductor Lasers; (1989) https://doi.org/10.1117/12.950203
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
Materials characterization of semiconductor structures suited for nonlinear optical applications has been performed by absorption and photomodulated absorption spectroscopy. With respect to non-modulated absorption spectroscopy, a strong increase in room temperature resolution is observed. We present here the first photomodulated absorption studies performed on AlxGa1-xAs/GaAs and InxGa1-xAs/GaAs superlattices and AlAs/GaAs tunnel diodes, revealing excellent resolution of excitonic transitions. The temperature dependence of the spectral lineshapes arising from bulk InGaAs and AlGaAs samples is studied in the temperature range from 100K to 300K, and is compared to lineshapes arising from excitonic transitions in superlattices. Application of this technique to InxGa1-xAs/GaAs structures grown on GaAs substrates, which due to their favorable band structure do not require sample thinning, is most attractive.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris Van Hoof, Douglas J. Arent, Jo De Boeck, Kristin Deneffe, and Gustaaf Borghs "Structural And Compositional Characterization Of Semiconductor Multilayers By Modulation Spectroscopies.", Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); https://doi.org/10.1117/12.950203
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