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28 August 2002 Advanced processing of group-III nitrides
S. J. Pearton, Fan Ren, B. P. Gila, Cammy R. Abernathy
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Proceedings Volume 10303, Gallium-Nitride-based Technologies: A Critical Review; 1030308 (2002) https://doi.org/10.1117/12.482624
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States
Abstract
Recent advances in developing process modules for GaN photonic and power electronic devices are reviewed. These processes include damage removal in dry etched n- and p- GaN, implant doping and isolation, novel gate dielectrics, improved Schottky and ohmic contacts.
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S. J. Pearton, Fan Ren, B. P. Gila, and Cammy R. Abernathy "Advanced processing of group-III nitrides", Proc. SPIE 10303, Gallium-Nitride-based Technologies: A Critical Review, 1030308 (28 August 2002); https://doi.org/10.1117/12.482624
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KEYWORDS
Gallium nitride
Dielectrics
Doping
Electronic components
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