Erbium-doped SiOxNy films produced by ECR-PECVD

Edward A. Irving

doi:10.1117/12.2283846

29 August 2017 Erbium-doped SiO_xN_y films produced by ECR-PECVD

Edward A. Irving

Proceedings Volume 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging; 103131E (2017) https://doi.org/10.1117/12.2283846
Event: Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada

Abstract

In this paper, we report on the fabrication of Erbium doped waveguide amplifiers (EDWA's) using electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). The salient process parameters are presented, as are the determination of the Er content through Rutherford Backscattering (RBS), and measurements of the film composition using elastic recoil detection (ERD), nuclear reaction analysis (NRA) and secondary ion mass spectroscopy (SIMS).

Citation Download Citation

Edward A. Irving "Erbium-doped SiO_xN_y films produced by ECR-PECVD", Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 103131E (29 August 2017); https://doi.org/10.1117/12.2283846

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