Microstructure And Patterning Of Laser Initiated Oxide Growth

Ian W. Boyd

doi:10.1117/12.950621

18 May 1989 Microstructure And Patterning Of Laser Initiated Oxide Growth

Ian W. Boyd

Proceedings Volume 1033, Trends in Quantum Electronics; (1989) https://doi.org/10.1117/12.950621
Event: International Conference on Trends in Quantum Electronics, 1988, Bucharest, Romania

Abstract

Microstructural studies of silicon dioxide films grown by laser and by traditional means using infrared spectrometry are described. Broad similarities and intriguing thickness dependences are discussed. A new technique of Direct Growth Lithography (DGL) is reported, whereby oxide patterns are selectively and directly grown over significant regions of a silicon wafer, with spatial features extending over a 3mm square area with linewidths down to around one micron.

Citation Download Citation

Ian W. Boyd "Microstructure And Patterning Of Laser Initiated Oxide Growth", Proc. SPIE 1033, Trends in Quantum Electronics, (18 May 1989); https://doi.org/10.1117/12.950621

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