Tip-enhanced Raman spectroscopy of semiconductor nanostructures

Zhongjian Zhang; David Dillen; Christopher J. Brennan; Alex De Palma; Gabriel Cossio; Rudresh Ghosh; Sanjay Banerjee; Emanuel Tutuc; Edward T. Yu

doi:10.1117/12.2275570

25 August 2017 Tip-enhanced Raman spectroscopy of semiconductor nanostructures

Zhongjian Zhang, David Dillen, Christopher J. Brennan, Alex De Palma, Gabriel Cossio, Rudresh Ghosh, Sanjay Banerjee, Emanuel Tutuc, Edward T. Yu

Author Affiliations +

Proceedings Volume 10350, Nanoimaging and Nanospectroscopy V; 103500A (2017) https://doi.org/10.1117/12.2275570
Event: SPIE Nanoscience + Engineering, 2017, San Diego, California, United States

Abstract

Raman scattering is a powerful probe of local bonding, strain, temperature, and other properties of materials via their influence on vibrational modes or optical phonons. Tip-enhanced Raman spectroscopy (TERS), in which plasmonic modes are excited at the apex of a metal-coated scanning probe tip, enables Raman scattering signals to be detected from nanoscale volumes with precise positional control. We discuss the application of TERS to characterize a variety of semiconductor nanostructures. In studies of Ge-SiGe core-shell nanowires, we measure spatially resolved Raman spectra along the length of a tapered nanowire to demonstrate the ability to measure local strain distributions with nanoscale spatial resolution. In tip-induced resonant Raman spectroscopy of monolayer and bilayer MoS₂, we observe large enhancements in Raman signal levels measured for MoS₂ associated with excitation of plasmonic gap modes between an Au-coated probe tip and Au substrate surface onto which MoS₂ has been transferred. Transitions in B exciton photoluminescence intensity between monolayer and bilayer regions of MoS₂ are observed and discussed. Significant differences in nanoscale Raman spectra between monolayer and bilayer MoS₂ are also observed. The origins of specific resonant Raman peaks, their dependence on Mo_S2 layer thickness, and spatial resolution associated with the transition in Raman spectra between monolayer and bilayer regions are described.

Citation Download Citation

Zhongjian Zhang, David Dillen, Christopher J. Brennan, Alex De Palma, Gabriel Cossio, Rudresh Ghosh, Sanjay Banerjee, Emanuel Tutuc, and Edward T. Yu "Tip-enhanced Raman spectroscopy of semiconductor nanostructures", Proc. SPIE 10350, Nanoimaging and Nanospectroscopy V, 103500A (25 August 2017); https://doi.org/10.1117/12.2275570

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KEYWORDS

Raman spectroscopy

Plasmonics

Raman scattering

Nanostructures

Near field optics

Phonons

Semiconductors

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