PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
We present a study on the. formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that monodoped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N: P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm(-3)) under a. wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of P-Zn-4N(O) complex defects via the. concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the. formation of stable p-type ZnO film through co-implantation.
Wei-Yen Woon
"Formation of p-type ZnO through cocktail implantation (Conference Presentation)", Proc. SPIE 10351, UV and Higher Energy Photonics: From Materials to Applications 2017, 1035106 (29 September 2017); https://doi.org/10.1117/12.2272848
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Wei-Yen Woon, "Formation of p-type ZnO through cocktail implantation (Conference Presentation)," Proc. SPIE 10351, UV and Higher Energy Photonics: From Materials to Applications 2017, 1035106 (29 September 2017); https://doi.org/10.1117/12.2272848