CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 10357 > Article
Presentation
25 September 2017 Theory of wurtzite-based spin lasers (Conference Presentation)
Paulo E. Faria Junior, Gaofeng Xu, Yang-Fang Chen, Guilherme M. Sipahi, Igor Zutic
Author Affiliations +
Proceedings Volume 10357, Spintronics X; 103572H (2017) https://doi.org/10.1117/12.2275712
Event: SPIE Nanoscience + Engineering, 2017, San Diego, California, United States
Abstract
The injection of spin polarized carriers in semiconductor lasers greatly modifies the device operation. Although the vast majority of spin lasers are based on semiconductors with zinc-blende structure[1], there is a recent exception using nitride-based compounds with wurtzite structure[2], which still lacks a reliable theoretical description. In order to address such deficiency, we investigated (In,Ga)N-based wurtzite quantum wells following typical device geometries[3]. The small spin-orbit coupling in such nitride materials allows the simultaneous spin polarization of electrons and holes, providing an unexplored path to control spin lasers. For instance, based on microscopic gain calculations[3,4] we found a robust gain asymmetry, one of the key signatures of spin laser operation. In addition, we combine these microscopic gain calculations with phenomenological rate equations[5] to investigate threshold reduction features. We show that the lasing threshold has a nonmonotonic dependence on electron spin polarization, even for a nonvanishing hole spin polarization. The complementary information of these theoretical frameworks provides a powerful predictive materials-specific tool to understand and guide the operation of semiconductor spin lasers. [1] Holub et al., PRL 98, 146603 (2007); Lindemann et al., APL 108, 042404 (2016); Rudolph et al., APL 82, 4516 (2003); Frougier et al., APL 103, 252402 (2013). [2] Cheng et al., Nat. Nanotech. 9, 845 (2014). [3] Faria Junior et al., arXiv:1701.07793 (2017). [4] Faria Junior et al., PRB 92, 075311 (2015). [5] Lee et al., APL 105, 042411 (2014).
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Paulo E. Faria Junior, Gaofeng Xu, Yang-Fang Chen, Guilherme M. Sipahi, and Igor Zutic "Theory of wurtzite-based spin lasers (Conference Presentation)", Proc. SPIE 10357, Spintronics X, 103572H (25 September 2017); https://doi.org/10.1117/12.2275712
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Semiconductor lasers
Spin polarization
Electrons
Semiconductors
Beam controllers
Nanotechnology
Photonics
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top