Plasma Deposited Silicon Nitride Film Chemistry

J. N. Chiang; D. W. Hess

doi:10.1117/12.951025

15 March 1989 Plasma Deposited Silicon Nitride Film Chemistry

J. N. Chiang, D. W. Hess

Proceedings Volume 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors; (1989) https://doi.org/10.1117/12.951025
Event: SPIE Advanced Processing Technologies for Optical and Electronic Devices (colocated wth OPTCON), 1988, Santa Clara, CA, United States

Abstract

The effect of deposition conditions on the structure and composition of plasma deposited (PD) silicon nitride films was studied using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR). This study focused on the line position and shape of the Si 2p and N is XPS peaks and the Si KLL Auger peak. PD silicon nitride films were transferred directly from the deposition chamber into a surface analysis system, thereby permitting analysis of as-deposited films without modification due to ion sputtering. Post-deposition Ar⁺ milling of PD silicon nitride films at ion energies as low as 500 eV, caused preferential removal of NH species and was thus unsuitable for surface cleaning before analysis. All films oxidized upon exposure to ambient; however, those deposited at low temperature with large quantities of NH, oxidized extensively.

Citation Download Citation

J. N. Chiang and D. W. Hess "Plasma Deposited Silicon Nitride Film Chemistry", Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); https://doi.org/10.1117/12.951025

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