Reactive Ion Etching (RIE) And Magnetron Ion Etching (MIE) Combinations For Opto-Electronic Integrated Circuit (OEIC) Processing

M. S. Lebby; P. A. Kiely; G. W. Taylor

doi:10.1117/12.951018

15 March 1989 Reactive Ion Etching (RIE) And Magnetron Ion Etching (MIE) Combinations For Opto-Electronic Integrated Circuit (OEIC) Processing

M. S. Lebby, P. A. Kiely, G. W. Taylor

Author Affiliations +

Proceedings Volume 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors; (1989) https://doi.org/10.1117/12.951018
Event: SPIE Advanced Processing Technologies for Optical and Electronic Devices (colocated wth OPTCON), 1988, Santa Clara, CA, United States

Abstract

There has been a growing interest in the application of low pressure plasma environments to III-V etching techniques. This interest has been generated by the need to etch sub-micron features with better linewidth and resolution than that which can be obtained with wet etching. This paper presents the initial results of combining RIE, the popular technique of etching III-V semiconductors, with MIE, a technique that has found considerable success in silicon processing. The combination of these two types of etchers to the fabrication of OEIC devices has yielded nigh performance electronic and opto-electronic structures. We present results that show initial calibration data taken from the MIE and RIE, and where etches are made by each system during the fabrication sequence. Using the MIE, undercuts in GaAs/A1GaAs have been formed beneath the gate to prevent source/drain shorting from ion implantation. The MIE is also used to define tungsten gates and silicon dioxide mesas in the DOES laser structure. The RIE has been used to define the DOES laser mesa with a photoresist mask. It has also been used with a wet chemical or MIE etch to form undercuts needed for the laser structure. Our goals are (1) to provide an undercut into the HFETs and HFETPDs barrier layer to prevent source/drain to gate shorting from ion implantation and similarly in the BICFET and DOES to prevent source to emitter shorting; (2) to provide a vertical undercut into the main mesa of the DOES laser which will aid in processing and the eventual etching of facets.

Citation Download Citation

M. S. Lebby, P. A. Kiely, and G. W. Taylor "Reactive Ion Etching (RIE) And Magnetron Ion Etching (MIE) Combinations For Opto-Electronic Integrated Circuit (OEIC) Processing", Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); https://doi.org/10.1117/12.951018

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KEYWORDS

Etching

Reactive ion etching

Gallium arsenide

Helium

Photoresist materials

Chlorine

Wet etching

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