High Frequency Semiconductor Heterostructure Device Analysis

Clifford M. Krowne; Gregory B. Tait

doi:10.1117/12.978507

18 November 1989 High Frequency Semiconductor Heterostructure Device Analysis

Clifford M. Krowne, Gregory B. Tait

Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978507
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States

Abstract

Two-terminal heterostructure diodes present many potential opportunities for high frequency operation, even into the millimeter wave frequency regime. Motivated by this fact, we have developed an algorithm which is globally convergent for solving the nonlinear Poisson equation. By appropriate numerical techniques, the nonlinear Poisson equation is coupled to the current continuity equations which can then be employed for high frequency, small signal, ac simulations. Numerical results for the AlyGa1-yAs system with layers as thin as a few hundred angstroms in thickness are provided.

Citation Download Citation

Clifford M. Krowne and Gregory B. Tait "High Frequency Semiconductor Heterostructure Device Analysis", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); https://doi.org/10.1117/12.978507

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