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Presentation + Paper
30 August 2017 Noise and detectivity of InAs/GaSb T2SL 4.5 μm IR detectors
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Measurements of low-frequency noise of type-II superlattice detectors designed for mid-IR wavelengths are used to determine noise limitations, calculate the real detectivity, and study 1/f noise-current correlations in these devices. No 1/f noise connected to the diffusion current is found as opposed to the generation-recombination, shunt, and tunneling currents. The contribution from the shunt current to 1/f noise can be so large that shunt-originated noise dominates in the high-temperature region, in which current is limited by the generation-recombination and diffusion components. It is also demonstrated that devices made of type-II superlattice contain traps generating random processes with thermally activated kinetics, and the activation energies of these traps are determined.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej Kolek, Łukasz Ciura, Krzysztof Czuba, Agata Jasik, Jarosław Jureńczyk, Iwona Sankowska, and Janusz Kaniewski "Noise and detectivity of InAs/GaSb T2SL 4.5 μm IR detectors", Proc. SPIE 10404, Infrared Sensors, Devices, and Applications VII, 1040402 (30 August 2017);

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