HfO2-SiO2 mixed film deposited by Ion Assisted Deposition Coevaporation

Xinshang Niu; Hongfei Jiao; Ganghua Bao; Jinlong Zhang; Xinbin Cheng; Zhanshan Wang

doi:10.1117/12.2280438

23 November 2017 HfO₂-SiO₂ mixed film deposited by ion assisted deposition coevaporation

Xinshang Niu, Hongfei Jiao, Ganghua Bao, Jinlong Zhang, Xinbin Cheng, Zhanshan Wang

Author Affiliations +

Proceedings Volume 10447, Laser-Induced Damage in Optical Materials 2017; 1044726 (2017) https://doi.org/10.1117/12.2280438
Event: SPIE Laser Damage, 2017, Boulder, Colorado, United States

Abstract

Low absorption, low scattering and high-density HfO₂ coatings lead to an important improvement of high power laser systems. In order to suppress the crystallization of HfO2 coatings fabricated with ion assisted deposition (IAD), we used double electron-beam (EB) coevaporation with ion beam assisting method to fabricate HfO₂-SiO₂ mixtures from two independent material sources. Crystallization following the different mixture ratios was investigated. Several prototypes were designed, featuring different HfO₂-SiO₂ ratios with similar physical thickness (500nm). The samples were deposited on fused silica and silicon substrates. X-ray diffraction patterns show that the degree of crystallization gradually fades away with increasing SiO₂ contents and when SiO₂ component reach 18%, the mixture film becomes almost amorphous. To decrease the high absorption originating from IAD method, thermal annealing in air at progressive temperatures was subsequently performed. It was found that post-annealing treatment at 600°C could eliminate the absorption at 1064nm. However, high temperature annealing would induce the crystallization of these initial amorphous coatings. In order to suppress the crystallization further to obtain amorphous structure even after 600°C annealing, the 25% SiO₂ sample was fabricated and it successfully obtain low roughness and low absorption equivalent to the bare substrate. Finally, a 1064 nm HR coating using SiO2 and mixed film of 25% SiO₂ concentration was prepared and annealed to prove its practical application in low loss and high LIDT optical elements.

Citation Download Citation

Xinshang Niu, Hongfei Jiao, Ganghua Bao, Jinlong Zhang, Xinbin Cheng, and Zhanshan Wang "HfO₂-SiO₂ mixed film deposited by ion assisted deposition coevaporation", Proc. SPIE 10447, Laser-Induced Damage in Optical Materials 2017, 1044726 (23 November 2017); https://doi.org/10.1117/12.2280438

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KEYWORDS

Annealing

Absorption

Doping

Scattering

Optical coatings

Refractive index

Laser scattering

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