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16 October 2017 Technology for defectivity improvement in resist coating and developing process in EUV lithography process
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Extreme ultraviolet lithography (EUVL) technology is getting closer to high volume manufacturing phase every year. In order to enhance the yield of EUV lithography processing, further improvement of defectivity and CD uniformity is required at the moment. In our previous report in 2017, we have exhibited the defectivity reduction by applying our new rinse and dispense system to a 24nm contact hole (CH) pattern. On the basis of the knowledge received through that evaluation, further study for improvement of the defectivity has been investigated in this paper. As a result of further optimization of the rinse process, 83 % further reduction of residue defect from the result reported previously is achieved. Also, CD uniformity control is a very crucial factor towards EUVL manufacturing phase. We have exposed 15 wafer batches continuously for both line/space and contact hole patterns in order to confirm the current status of wafer to wafer (WTW) as well as field to field (FTF), die to die (DTD), and local uniformity. Now further work for improving CD stability is ongoing based on the results from this first trial.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuya Kamei, Takahiro Shiozawa, Shinichiro Kawakami, Hiroshi Ichinomiya, Masashi Enomoto, Kathleen Nafus, and Philippe Foubert "Technology for defectivity improvement in resist coating and developing process in EUV lithography process", Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104501F (16 October 2017);

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