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13 July 2017 Application of EUV dark field image for EUVL mask fabrication
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An EUV dark field image of a phase defect on a patterned mask was studied using simulation. The wafer images of the defect were obtained by simulation, and wafer CD deviation caused by the defect was calculated. The dark field image of the defect was also obtained by simulation, and the defect signal intensity was calculated and compared with the wafer CD deviation. There was a significant relationship between the wafer CD deviation and the defect signal intensity in the dark field image at the respective maximum in the through-focus range. Therefore, the wafer CD deviation can be estimated from the dark field image using though focus.
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Takeshi Yamane and Hidehiro Watanabe "Application of EUV dark field image for EUVL mask fabrication", Proc. SPIE 10454, Photomask Japan 2017: XXIV Symposium on Photomask and Next-Generation Lithography Mask Technology, 104540N (13 July 2017);

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