Paper
1 September 2017 Raman and photoluminescence investigation of InAs/GaSb and InAs/InAsSb superlattices
K. Murawski, K. Grodecki, A. Henig, K. Michalczewski, Ł. Kubiszyn, D. Benyahia, B. Jankiewicz, B. Budner, A. Wysmolek, P. Martyniuk
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Proceedings Volume 10455, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods; 1045507 (2017) https://doi.org/10.1117/12.2280729
Event: Twelfth Integrated Optics – Sensors, Sensing Structures and Methods Conference, 2017, Szczyrk-Gliwice, Poland
Abstract
In this work we compare two superlattices: InAs/GaSb (sample A) and InAs/InAsSb (sample B). Both samples were grown in MBE VIGO/ MUT laboratory on 2 inch (001) GaAs substrate using MBE technique. We characterized quality and thickness of the samples using three methods: photoluminescence, X-ray diffraction (XRD) and Raman scattering. Period of superlattice layers was obtained using Raman scattering and XRD measurements. For sample A it was equal 5.3 nm and 4.76 nm for InAs and GaSb layers respectively, for sample B 8.3 nm and 9.4 nm. Photoluminescence spectrum for sample A exhibits two peaks: band gap peak at 0.5 eV and deep state peak at 0.25 eV. Spectrum for sample B consists of one band gap peak at 0.17 eV.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Murawski, K. Grodecki, A. Henig, K. Michalczewski, Ł. Kubiszyn, D. Benyahia, B. Jankiewicz, B. Budner, A. Wysmolek, and P. Martyniuk "Raman and photoluminescence investigation of InAs/GaSb and InAs/InAsSb superlattices", Proc. SPIE 10455, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 1045507 (1 September 2017); https://doi.org/10.1117/12.2280729
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