Modeling of current spreading in high-power broad-area lasers and its impact on the lateral far field divergence

Anissa Zeghuzi; Mindaugas Radziunas; Hans Wenzel; Hans-Jürgen Wünsche; Uwe Bandelow; Andrea Knigge

doi:10.1117/12.2289803

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23 February 2018 Modeling of current spreading in high-power broad-area lasers and its impact on the lateral far field divergence

Anissa Zeghuzi, Mindaugas Radziunas, Hans Wenzel, Hans-Jürgen Wünsche, Uwe Bandelow, Andrea Knigge

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Proceedings Volume 10526, Physics and Simulation of Optoelectronic Devices XXVI; 105261H (2018) https://doi.org/10.1117/12.2289803
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

The effect of current spreading on the lateral far–field divergence of high–power broad–area lasers is investigated with a time–dependent model using different descriptions for the injection of carriers into the active region. Most simulation tools simply assume a spatially constant injection current density below the contact stripe and a vanishing current density beside. Within the drift–diffusion approach, however, the injected current density is obtained from the gradient of the quasi–Fermi potential of the holes, which solves a Laplace equation in the p–doped region if recombination is neglected. We compare an approximate solution of the Laplace equation with the exact solution and show that for the exact solution the highest far–field divergence is obtained. We conclude that an advanced modeling of the profiles of the injection current densities is necessary for a correct description of far–field blooming in broad–area lasers.

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Anissa Zeghuzi, Mindaugas Radziunas, Hans Wenzel, Hans-Jürgen Wünsche, Uwe Bandelow, and Andrea Knigge "Modeling of current spreading in high-power broad-area lasers and its impact on the lateral far field divergence", Proc. SPIE 10526, Physics and Simulation of Optoelectronic Devices XXVI, 105261H (23 February 2018); https://doi.org/10.1117/12.2289803

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