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23 February 2018 Modeling of the emissivity of super-wavelength black silicon in the geometrical optics regime
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In this work we report the modelling of the emissivity of micromachined black silicon structure based on treating the black silicon as an array of cone-shaped textured silicon structure. The geometrical ray optics is used to calculate the reflection and transmission coefficient for each ray hitting the silicon surface with a certain incidence angle. The coherence length is assumed to be much smaller than the travelled distance by the rays such that their contribution is summed incoherently. The validity of the geometrical optics holds since the modeled structure dimensions are much larger than the wavelength. The model is applied on experimental data reported in the literature for black silicon structure fabricated using femtosecond laser pulses. The height of the structure is in the order of 20 μm, the cone angle is about 20 degrees and silicon doping level is about 1019 cm-3. The model results are compared to the measured emissivity in the wavelength range of 500 nm to 2000 nm good matching within 0.5 % to 5 % is obtained for smaller to longer wavelengths, respectively.
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Momen Anwar, Yasser Sabry, and Diaa Khalil "Modeling of the emissivity of super-wavelength black silicon in the geometrical optics regime", Proc. SPIE 10526, Physics and Simulation of Optoelectronic Devices XXVI, 105262P (23 February 2018);

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