Paper
23 February 2018 Optical simulations of blue and green semipolar InGaN/GaN lasers
Maciej Kuc, Łukasz Piskorski, Adam K. Sokół, Maciej Dems, Michał Wasiak, Robert P. Sarzała, Tomasz Czyszanowski
Author Affiliations +
Abstract
III-N-based edge-emitting lasers suffer from low refractive index contrast between GaN, AlGaN and InGaN layers, conventionally used in their epitaxial structures. This issue becomes more severe with an increase in wavelength at which those devices operate when tuning from blue-violet to real blue and green light. To overcome this issue and to increase the refractive index contrast other materials must be employed within the epitaxial structures replacing the standard nitride layers with materials with lower refractive index. We demonstrate results of effective-index numerical calculations performed for the state-of-the-art semipolar real blue (471 nm) and green (518 nm) edge-emitting lasers with structural modifications that include ITO, AlInN, plasmonic GaN:Ge and nanoporous GaN layers. Such solutions are extensively investigated for III-N-based EELs operating in blue-violet region but only separately. Using combination of these solutions we managed to increase optical confinement factor over twice in blue- and over 3.5-times in green-EELs.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maciej Kuc, Łukasz Piskorski, Adam K. Sokół, Maciej Dems, Michał Wasiak, Robert P. Sarzała, and Tomasz Czyszanowski "Optical simulations of blue and green semipolar InGaN/GaN lasers", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 1053228 (23 February 2018); https://doi.org/10.1117/12.2287842
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Cited by 3 scholarly publications.
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KEYWORDS
Gallium nitride

Refractive index

Aluminum

Plasmonics

Dielectric polarization

Cladding

Optical simulations

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