Progress in beta-gallium-oxide materials and devices (Conference Presentation)

James S. Speck

doi:10.1117/12.2292778

14 March 2018 Progress in beta-gallium-oxide materials and devices (Conference Presentation)

James S. Speck

Proceedings Volume 10533, Oxide-based Materials and Devices IX; 1053307 (2018) https://doi.org/10.1117/12.2292778
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

In this talk, we provide an overview overview of our work on beta-Ga2O3 growth, doping, heterostructures and devices. In plasma-assisted MBE growth of beta-Ga2O3 we demonstrate the differences in growth on cleavage (e.g., (100) vs. non-cleavage planes (e.g., (010) or (001)), the propensity for growth rate limitations by suboxide formation. We demonstrate unintentional doping concentration in the mid10E15 cm-3 range, and controllable intentional doping with electron concentrations from 10E16 to >10E20 cm-3. We review the development and characterization of coherent (Al,Ga)2O3/Ga2O3 heterostructures and demonstration of modulation doping and MODFETs.

Conference Presentation

Citation Download Citation

James S. Speck "Progress in beta-gallium-oxide materials and devices (Conference Presentation)", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 1053307 (14 March 2018); https://doi.org/10.1117/12.2292778

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