A review of the growth, doping, and applications of Beta-Ga2O3 thin films

Manijeh Razeghi; Ji-Hyeon Park; Ryan McClintock; Dimitris Pavlidis; Ferechteh H. Teherani; David J. Rogers; Brenden A. Magill; Giti A. Khodaparast; Yaobin Xu; Jinsong Wu; Vinayak P. Dravid

doi:10.1117/12.2302471

14 March 2018 A review of the growth, doping, and applications of β-Ga₂O₃ thin films

Manijeh Razeghi, Ji-Hyeon Park, Ryan McClintock, Dimitris Pavlidis, Ferechteh H. Teherani, David J. Rogers, Brenden A. Magill, Giti A. Khodaparast, Yaobin Xu, Jinsong Wu, Vinayak P. Dravid

Author Affiliations +

Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105330R (2018) https://doi.org/10.1117/12.2302471
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

β-Ga₂O₃ is emerging as an interesting wide band gap semiconductor for solar blind photo detectors (SBPD) and high power field effect transistors (FET) because of its outstanding material properties including an extremely wide bandgap (Eg ~4.9eV) and a high breakdown field (8 MV/cm). This review summarizes recent trends and progress in the growth/doping of β-Ga₂O₃ thin films and then offers an overview of the state-of-the-art in SBPD and FET devices. The present challenges for β-Ga₂O₃ devices to penetrate the market in real-world applications are also considered, along with paths for future work.

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Manijeh Razeghi, Ji-Hyeon Park, Ryan McClintock, Dimitris Pavlidis, Ferechteh H. Teherani, David J. Rogers, Brenden A. Magill, Giti A. Khodaparast, Yaobin Xu, Jinsong Wu, and Vinayak P. Dravid "A review of the growth, doping, and applications of β-Ga₂O₃ thin films", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105330R (14 March 2018); https://doi.org/10.1117/12.2302471

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