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23 February 2018 Group IV mid-infrared devices and circuits
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Abstract
In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelength region and we report several active and passive devices realised in these materials. We particularly focus on devices and circuits for wavelengths longer than 7 micrometers.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Z. Mashanovich, J. Soler Penadés, W. Cao, Z. Qu, A. Osman, Y. Wu, A. Z. Khokhar, C. J. Littlejohns, S. Stankovic, S. Reynolds, V. Mittal, G. S. Murugan, J. S. Wilkinson, Y. Qi, F. Y. Gardes, D. J. Thomson, and M. Nedeljkovic "Group IV mid-infrared devices and circuits", Proc. SPIE 10535, Integrated Optics: Devices, Materials, and Technologies XXII, 1053512 (23 February 2018); https://doi.org/10.1117/12.2289531
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