Comb and hybrid laser-driven WDM silicon photonic interconnects for exascale and HPC applications (Conference Presentation)

Ashkan Seyedi; Di Liang; Géza Kurczveil; Zhihong Huang; Marco Fiorentino; Ray Beausoleil

doi:10.1117/12.2287171

14 March 2018 Comb and hybrid laser-driven WDM silicon photonic interconnects for exascale and HPC applications (Conference Presentation)

Ashkan Seyedi, Di Liang, Géza Kurczveil, Zhihong Huang, Marco Fiorentino, Ray Beausoleil

Author Affiliations +

Proceedings Volume 10538, Optical Interconnects XVIII; 1053818 (2018) https://doi.org/10.1117/12.2287171
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Initially, we’ll discuss an SOI based, carrier injection micro-ring modulator. The static optical and electrical characteristics of this device will be reviewed and described. Thermal control and modulation mechanisms with pre-emphasis will be outlined. Automated wafer-lever optical/electrical results from volume foundries (Leti and STMicro) used for PDK/Verilog model development will be reviewed, along with experimental data on direct modulation to 25 Gb/s, crosstalk at various DWDM channel separations, and demonstrations with an external quantum-dot based comb laser with 80 and 50GHz channel spacing. Following this, our work on directly modulated hybrid quantum-well ring lasers will be reviewed in design, fabrication. Experimental results for modulation at 12.5 Gb/s/channel, integration with MOS capacitor for wavelength control and modulation and a thermal shunt for temperature management will highlight the advantages of this technology that may be exploited. Subsequently, our work on hybrid quantum-dot based comb lasers for on-chip DWDM sources will be discussed in their details of physical operation, demonstrating successful mode-locking and noise-free operation across the 20-80C thermal range. Our work on the integration of on-chip APDs from a CMOS-compatible processes will also be reviewed, demonstrating error-free operation at 12.5 Gb/s and 25 Gb/s with a sensitivity of -26dBm and -16dBm, respectively. The use of APDs will drastically decrease the overall power consumption of the interconnect, lowering total cost of ownership. Finally, our most recent progress on integration of the silicon photonics with CMOS by a flip-chip will be reviewed showing high-speed modulation and thermal control for a multi-channel DWDM transceiver.

Conference Presentation

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Ashkan Seyedi, Di Liang, Géza Kurczveil, Zhihong Huang, Marco Fiorentino, and Ray Beausoleil "Comb and hybrid laser-driven WDM silicon photonic interconnects for exascale and HPC applications (Conference Presentation)", Proc. SPIE 10538, Optical Interconnects XVIII, 1053818 (14 March 2018); https://doi.org/10.1117/12.2287171

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KEYWORDS

Modulation

Dense wavelength division multiplexing

Silicon photonics

Avalanche photodetectors

Data modeling

Modulators

Optical design

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