Double electron barrier structure for suppression of dark current in microjunction-based type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors

Romain Chevallier; Abbas Haddadi; Manijeh Razeghi

doi:10.1117/12.2297477

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26 January 2018 Double electron barrier structure for suppression of dark current in microjunction-based type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors

Romain Chevallier, Abbas Haddadi, Manijeh Razeghi

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Proceedings Volume 10540, Quantum Sensing and Nano Electronics and Photonics XV; 1054007 (2018) https://doi.org/10.1117/12.2297477
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Reduction of dark current density in microjunction-based InAs/InAs_1-xSb_x type-II superlattice long-wavelength infrared photodetectors was demonstrated. A double electron barrier design was used to suppress both generation-recombination and surface dark currents. The photodetectors exhibited high surface resistivity after passivation with SiO₂, which permits the use of small size features without having strong surface leakage current degrading the electrical performance. Fabricating a microjunction structure (25×25 μm² mesas with 10×10 μm² microjunctions) with this photodetector double barrier design results in a dark current density of 6.3×10^-6 A/cm² at 77 K. The device has an 8 μm cut-off wavelength at 77 K and exhibits a quantum efficiency of 31% for a 2 μm-thick absorption region, which results in a specific detectivity value of 1.2×10¹² cm·Hz^1/2/W at 77 K.

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Romain Chevallier, Abbas Haddadi, and Manijeh Razeghi "Double electron barrier structure for suppression of dark current in microjunction-based type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors", Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV, 1054007 (26 January 2018); https://doi.org/10.1117/12.2297477

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