Microcavity III-V lasers monolithically grown on silicon

B. Mayer; S. Mauthe; Y. Baumgartner; S. Wirths; J. Winniger; P. Staudinger; H. Schmid; M. Sousa; L. Czornomaz; K. E. Moselund

doi:10.1117/12.2291735

26 January 2018 Microcavity III-V lasers monolithically grown on silicon

B. Mayer, S. Mauthe, Y. Baumgartner, S. Wirths, J. Winniger, P. Staudinger, H. Schmid, M. Sousa, L. Czornomaz, K. E. Moselund

Author Affiliations +

Proceedings Volume 10540, Quantum Sensing and Nano Electronics and Photonics XV; 105401D (2018) https://doi.org/10.1117/12.2291735
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

We will present our recent work on III-V micro-cavity lasers monolithically grown on silicon substrates. The III-V material is directly grown using Template-Assisted-Selective-Epitaxy (TASE) within oxide cavities patterned using conventional lithographic techniques on top of the silicon substrate. This allows for the local integration of single-crystal III-V active gain material. Two variations of this technique will be discussed; the direct growth of disc lasers and the two-step approach via a virtual substrate. Room temperature single-mode optically pumped lasing is achieved in GaAs micro-cavity lasers, and devices show a remarkably low shift of the lasing threshold (T₀=170K) with temperature. Dependence on cavity geometry and pump power will be discussed.

Citation Download Citation

B. Mayer, S. Mauthe, Y. Baumgartner, S. Wirths, J. Winniger, P. Staudinger, H. Schmid, M. Sousa, L. Czornomaz, and K. E. Moselund "Microcavity III-V lasers monolithically grown on silicon ", Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV, 105401D (26 January 2018); https://doi.org/10.1117/12.2291735

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