Raman Scattering From Collective And Localized Excitations In Diluted Magnetic Semiconductors

A. K. Ramdas; S. Rodriguez

doi:10.1117/12.951570

5 July 1989 Raman Scattering From Collective And Localized Excitations In Diluted Magnetic Semiconductors

A. K. Ramdas, S. Rodriguez

Proceedings Volume 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology; (1989) https://doi.org/10.1117/12.951570
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

Raman spectroscopy provides powerful insights into the novel physical properties of the tetrahedrally coordinated diluted magnetic semiconductors, the II-VI semiconductors with group II ions randomly replaced with transition metal ions like Mn2+, Co2+ or Fe2+. The technique is equally fruitful in the context of the special issues which arise in epilayers and superlattices of these semiconductors.

Citation Download Citation

A. K. Ramdas and S. Rodriguez "Raman Scattering From Collective And Localized Excitations In Diluted Magnetic Semiconductors", Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); https://doi.org/10.1117/12.951570

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