Impact of the top DBR in GaAs-based VCSELs on the threshold current and the cavity photon lifetime

Patrycja Śpiewak; Marcin Gębski; Nasibeh Haghighi; Ricardo Rosales; Paulina Komar; Jarosław Walczak; Marta Więckowska; Robert P. Sarzała; James A. Lott; Michał Wasiak

doi:10.1117/12.2289939

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19 February 2018 Impact of the top DBR in GaAs-based VCSELs on the threshold current and the cavity photon lifetime

Patrycja Śpiewak, Marcin Gębski, Nasibeh Haghighi, Ricardo Rosales, Paulina Komar, Jarosław Walczak, Marta Więckowska, Robert P. Sarzała, James A. Lott, Michał Wasiak

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Proceedings Volume 10552, Vertical-Cavity Surface-Emitting Lasers XXII; 105520O (2018) https://doi.org/10.1117/12.2289939
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

This paper presents results of numerical simulations of a GaAs-based vertical-cavity surface-emitting laser, emitting at 980 nm. These simulations concern the influence of the number of top DBR pairs on the laser’s threshold parameters, as well as the optical loses in the cavity. Moreover, electrical parameters such as the device’s resistance and its capacitance-related temporal characteristics are analyzed as functions of the thickness of the top DBR. The simulations suggest that there is a possibility of a significant reduction in the number of pairs in the top DBR that can be beneficial in certain applications.

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Patrycja Śpiewak, Marcin Gębski, Nasibeh Haghighi, Ricardo Rosales, Paulina Komar, Jarosław Walczak, Marta Więckowska, Robert P. Sarzała, James A. Lott, and Michał Wasiak "Impact of the top DBR in GaAs-based VCSELs on the threshold current and the cavity photon lifetime", Proc. SPIE 10552, Vertical-Cavity Surface-Emitting Lasers XXII, 105520O (19 February 2018); https://doi.org/10.1117/12.2289939

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