Ionizing doses and displacement damage testing of COTS CMOS imagers

Frédéric Bernard; Sophie Petit; Sophie Courtade

doi:10.1117/12.2308285

21 November 2017 Ionizing doses and displacement damage testing of COTS CMOS imagers

Frédéric Bernard, Sophie Petit, Sophie Courtade

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Proceedings Volume 10566, International Conference on Space Optics — ICSO 2008; 105662S (2017) https://doi.org/10.1117/12.2308285
Event: International Conference on Space Optics 2008, 2008, Toulouse, France

Abstract

CMOS sensors begin to be a credible alternative to CCD sensors in some space missions. However, technology evolution of CMOS sensors is much faster than CCD one's. So a continuous technology evaluation is needed for CMOS imagers. Many of commercial COTS (Components Off The Shelf) CMOS sensors use organic filters, micro-lenses and non rad-hard technologies. An evaluation of the possibilities offered by such technologies is interesting before any custom development. This can be obtained by testing commercial COTS imagers. This article will present electro-optical performances evolution of off the shelves CMOS imagers after Ionizing Doses until 50kRad(Si) and Displacement Damage environment tests (until 10¹¹ p/cm² at 50 MeV). Dark current level and non uniformity evolutions are compared and discussed. Relative spectral response measurement and associated evolution with irradiation will also be presented and discussed. Tests have been performed on CNES detection benches.

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Frédéric Bernard, Sophie Petit, and Sophie Courtade "Ionizing doses and displacement damage testing of COTS CMOS imagers", Proc. SPIE 10566, International Conference on Space Optics — ICSO 2008, 105662S (21 November 2017); https://doi.org/10.1117/12.2308285

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