A comparison of different methods of characterizing EUV photoresist shrinkage

Ramya Viswanathan; Scott Mansfield; Wenxin Li; Shuhai Fan; Roger Cornell; Hongxin Zhang

doi:10.1117/12.2297695

19 March 2018 A comparison of different methods of characterizing EUV photoresist shrinkage

Ramya Viswanathan, Scott Mansfield, Wenxin Li, Shuhai Fan, Roger Cornell, Hongxin Zhang

Proceedings Volume 10583, Extreme Ultraviolet (EUV) Lithography IX; 105830Z (2018) https://doi.org/10.1117/12.2297695
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

The efficacy of OPC models depends on the ability to determine the physical dimensions of a large variety of photoresist patterns. This ability is impacted by a long observed phenomenon, photoresist shrinkage during CD-SEM metrology. As technology dimensions have scaled, the ability to directly measure the photoresist physical dimensions have diminished, while the need to reduce sources of uncertainty and error have increased. It has therefore become imperative to find other techniques to characterize this effect. In this paper, we compare methods of characterizing photoresist shrinkage of patterns using both etch-based and metrology-based approaches.

Conference Presentation

Citation Download Citation

Ramya Viswanathan, Scott Mansfield, Wenxin Li, Shuhai Fan, Roger Cornell, and Hongxin Zhang "A comparison of different methods of characterizing EUV photoresist shrinkage", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830Z (19 March 2018); https://doi.org/10.1117/12.2297695

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