Constructing a robust PSCAR process for EUV

Michael Carcasi; Seiji Nagahara; Gosuke Shiraishi; Yukie Minekawa; Hiroyuki Ide; Yoshihiro Kondo; Kosuke Yoshihara; Masaru Tomono; Ryo Shimada; Kazuhiro Takeshita; Teruhiko Moriya; Yuya Kamei; Kathleen Nafus; Serge Biesemans; Hideo Nakashima; Masafumi Hori; Ken Maruyama; Hisashi Nakagawa; Tomoki Nagai; Satoshi Dei; Masayuki Miyake; Takehiko Naruoka; Motoyuki Shima; Geert Vandenberghe; Danilo De Simone; Philippe Foubert; John S. Petersen; Akihiro Oshima; Seiichi Tagawa

doi:10.1117/12.2297370

27 March 2018 Constructing a robust PSCAR process for EUV

Michael Carcasi, Seiji Nagahara, Gosuke Shiraishi, Yukie Minekawa, Hiroyuki Ide, Yoshihiro Kondo, Kosuke Yoshihara, Masaru Tomono, Ryo Shimada, Kazuhiro Takeshita, Teruhiko Moriya, Yuya Kamei, Kathleen Nafus, Serge Biesemans, Hideo Nakashima, Masafumi Hori, Ken Maruyama, Hisashi Nakagawa, Tomoki Nagai, Satoshi Dei, Masayuki Miyake, Takehiko Naruoka, Motoyuki Shima, Geert Vandenberghe, Danilo De Simone, Philippe Foubert, John S. Petersen, Akihiro Oshima, Seiichi Tagawa

Author Affiliations +

Proceedings Volume 10583, Extreme Ultraviolet (EUV) Lithography IX; 105831M (2018) https://doi.org/10.1117/12.2297370
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

In order to lower the cost of ownership of EUV lithography, high sensitivity EUV resists , enabling higher throughput of EUV scanners are being explored. The concept that utilizes a Photosensitized Chemically Amplified Resist^TM (PSCAR^TM) is a promising solution for achieving increased resist sensitivity, while maintaining other high performance characteristics of the material (i.e., resolution, line edge roughness (LER), exposure latitude). PSCAR uses a UV exposure after EUV exposure and selective absorption to meet these goals . Preliminary results have been discussed in previous papers ^1-8.

PSCAR utilizes an area-selective photosensitization mechanism to generate more acid in the exposed areas during a UV exposure. PSCAR is an attempt to break the resolution, line-edge-roughness, and sensitivity trade-off (RLS trade-off) relationships that limit standard chemically amplified resists. The photosensitizer, which is generated in exposed area by a photoacid catalytic reaction, absorbs the UV exposure light selectively and generates additional acid in the exposed area only.

Material development and UV exposure uniformity are the key elements of PSCAR technology for semiconductor mass fabrication. This paper will review the approaches toward improvement of PSCAR resist process robustness. The chemistry’s EUV exposure cycle of learning results from experiments at imec will be discussed.

Conference Presentation

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Michael Carcasi, Seiji Nagahara, Gosuke Shiraishi, Yukie Minekawa, Hiroyuki Ide, Yoshihiro Kondo, Kosuke Yoshihara, Masaru Tomono, Ryo Shimada, Kazuhiro Takeshita, Teruhiko Moriya, Yuya Kamei, Kathleen Nafus, Serge Biesemans, Hideo Nakashima, Masafumi Hori, Ken Maruyama, Hisashi Nakagawa, Tomoki Nagai, Satoshi Dei, Masayuki Miyake, Takehiko Naruoka, Motoyuki Shima, Geert Vandenberghe, Danilo De Simone, Philippe Foubert, John S. Petersen, Akihiro Oshima, and Seiichi Tagawa "Constructing a robust PSCAR process for EUV", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105831M (27 March 2018); https://doi.org/10.1117/12.2297370

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