Presentation + Paper
23 May 2018 Very long wavelength type-II InAs/GaSb superlattice infrared detectors
L. Höglund, J. B. Rodriguez, S. Naureen, R. Ivanov, C. Asplund, R. Marcks von Würtemberg, R. Rossignol, P. Christol, A. Rouvié, J. Brocal, O. Saint-Pé, E. Costard
Author Affiliations +
Abstract
In this paper, results from the development of LWIR and VLWIR InAs/GaSb type-II infrared photodetector arrays are presented. Dark currents comparable to the HgCdTe benchmark (Rule07) have been observed and the quantum efficiencies of the detectors exceed 30 %. Bias and temperature dependencies of the QE have been studied showing very low turn on bias (~-25mV) and no variation of the peak QE value with temperature. These results show that there are no unintentional barriers in the detector structures and that the diffusion lengths are long enough to provide efficient collection of carriers. Initial results from the extension of the cut-off wavelength from 11 μm to 14 μm are also presented as well as initial results from photodiodes with thicker absorbers to enhance the QE.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Höglund, J. B. Rodriguez, S. Naureen, R. Ivanov, C. Asplund, R. Marcks von Würtemberg, R. Rossignol, P. Christol, A. Rouvié, J. Brocal, O. Saint-Pé, and E. Costard "Very long wavelength type-II InAs/GaSb superlattice infrared detectors", Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106240I (23 May 2018); https://doi.org/10.1117/12.2292977
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Cited by 1 scholarly publication.
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KEYWORDS
Quantum efficiency

Photodiodes

Detector arrays

Sensors

Superlattices

Absorption

Long wavelength infrared

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