Numerical simulation of passivated long-wave IR HgCdTe surfaces and their effect on detector performance

Ilya Prigozhin; Andreu Glasmann; Enrico Bellotti

doi:10.1117/12.2305127

14 May 2018 Numerical simulation of passivated long-wave IR HgCdTe surfaces and their effect on detector performance

Ilya Prigozhin, Andreu Glasmann, Enrico Bellotti

Proceedings Volume 10624, Infrared Technology and Applications XLIV; 106240T (2018) https://doi.org/10.1117/12.2305127
Event: SPIE Defense + Security, 2018, Orlando, FL, United States

Abstract

Although HgCdTe imagers are a well-established technology, photodetectors fabricated using the same process still yield a large variation in their performance characteristics, largely stemming from hard-to-control pecu- liarities at the interface between the surface passivation and the active region of each photodiode. This work investigates the dark current characteristics of long-wave IR (cutoff wavelength of 10um) Hg_0.774Cd_0.226Te mesa photodiodes, which have been passivated with a CdTe film. We use a 2-D model of a p-on-n device structure to study how interface states and Cadmium diffusion at the passivation interface can influence the photodiode dark current.

Conference Presentation

Citation Download Citation

Ilya Prigozhin, Andreu Glasmann, and Enrico Bellotti "Numerical simulation of passivated long-wave IR HgCdTe surfaces and their effect on detector performance", Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106240T (14 May 2018); https://doi.org/10.1117/12.2305127

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