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29 May 2018 Single layer microbolometer detector pixel using ZnO material
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This paper presents the development of a single layer microbolometer pixel fabricated using only ZnO material coated with atomic layer deposition. Due to the stress-free nature and high temperature coefficient of resistance of the ALD coated ZnO material, it can be used both as structural and active layers in microbolometer detectors. The design, simulations, and the fabrication optimization of 35 μm single layer ZnO microbolometers are shown in this study. The designed pixel has a thermal conductance of 3.4x10-7 W/K and a thermal time constant of 1.34 ms while it has a maximum displacement of 0.43 μm under 1000g acceleration. This structure can be used to decrease the design complexities and fabrication costs and increase the yield of the detectors making them possible to be used in low-cost applications.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Yusuf Tanrikulu, Ciğdem Yildizak, Ali K. Okyay, Orhan Akar, Adem Sarac, and Tayfun Akin "Single layer microbolometer detector pixel using ZnO material", Proc. SPIE 10624, Infrared Technology and Applications XLIV, 1062417 (29 May 2018);

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