Physical device modeling of Si/Si1-xGex multi-quantum well detector to optimize Ge content for higher thermal sensitivity

Atia Shafique; Shahbaz Abbasi; Omer Ceylan; Canan B. Kaynak; Mehmet Kaynak; Yasar Gurbuz

doi:10.1117/12.2305003

29 May 2018 Physical device modeling of Si/Si_1-xGe_x multi-quantum well detector to optimize Ge content for higher thermal sensitivity

Atia Shafique, Shahbaz Abbasi, Omer Ceylan, Canan B. Kaynak, Mehmet Kaynak, Yasar Gurbuz

Author Affiliations +

Proceedings Volume 10624, Infrared Technology and Applications XLIV; 106241A (2018) https://doi.org/10.1117/12.2305003
Event: SPIE Defense + Security, 2018, Orlando, FL, United States

Abstract

This paper presents the physical device modeling of a Si/Si_1-xGe_x multi-quantum well (MQW) detector to optimize the Ge content in the Si/Si_1-xGe_x well required to enhance thermal sensitivity for a potential microbolometer application. The modeling approach comprises a self-consistent coupled Poisson-Schroedinger solution in series with the thermionic emission theory at the Si/Si_1-xGe_x heterointerface and quantum confinement within the Si/Si_1-xGe_x MQW. The integrated simulation environment developed in Sentauruas WorkBench (SWB) TCAD is employed to investigate the transfer characteristics of the device consisting three stacks of Si/Si_1-xGe_x wells with an active area of 17μm x 17μm were investigated and compared with experiment data.

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Citation Download Citation

Atia Shafique, Shahbaz Abbasi, Omer Ceylan, Canan B. Kaynak, Mehmet Kaynak, and Yasar Gurbuz "Physical device modeling of Si/Si_1-xGe_x multi-quantum well detector to optimize Ge content for higher thermal sensitivity", Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106241A (29 May 2018); https://doi.org/10.1117/12.2305003

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