Circuits-electromagnetics co-design: a new paradigm for silicon-based THz systems-on-chip

Kaushik Sengupta; Xue Wu

doi:10.1117/12.2305522

Translator Disclaimer

11 May 2018 Circuits-electromagnetics co-design: a new paradigm for silicon-based THz systems-on-chip

Kaushik Sengupta, Xue Wu

Author Affiliations +

Proceedings Volume 10634, Passive and Active Millimeter-Wave Imaging XXI; 106340G (2018) https://doi.org/10.1117/12.2305522
Event: SPIE Defense + Security, 2018, Orlando, Florida, United States

Abstract

Silicon-based integrated circuit technology provides a great platform for enabling compact, efficient, low-power, chipscale THz systems for new applications in sensing, imaging and communication. This is partially facilitated by scaling that has pushed device cut-off frequencies (f_t, f_max) up into the sub-THz and THz frequency range, the true paradigm shift in silicon integration is that it provides a unique opportunity to enable a field of active THz electromagnetics realizable through a circuits-EM-systems co-design approach. At these frequencies, the chip dimension is comparable to THz wavelengths which allows novel scattering and radiating properties in a substrate that simultaneously supports a billion high-frequency transistors that can generate, process and sense these signals. The ability to actively synthesize, manipulate and sense THz EM fields at sub-wavelength scales with circuits opens up a new design space for THz electronics. THz architectures emerging from this space are often multi-functional, reconfigurable and break many of the classical trade-offs of a partitioned design approach. This paper provides examples to illustrate this design methodology on THz signal generation with dynamic waveform shaping and THz spectrum sensing.

Citation Download Citation

Kaushik Sengupta and Xue Wu "Circuits-electromagnetics co-design: a new paradigm for silicon-based THz systems-on-chip", Proc. SPIE 10634, Passive and Active Millimeter-Wave Imaging XXI, 106340G (11 May 2018); https://doi.org/10.1117/12.2305522

ACCESS THE FULL ARTICLE